datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

P/N + Description + Content Search

Search Word's :
Part Name(s) : MGF7169C
MITSUBISHI ELECTRIC
MITSUBISHI ELECTRIC
Description : UHF BAND GaAs POWER AMPLIFIER
Part Name(s) : MGF7170AC MGF7170C
MITSUBISHI ELECTRIC
MITSUBISHI ELECTRIC
Description : UHF BAND GaAs POWER AMPLIFIER
Part Name(s) : MGF7168C
MITSUBISHI ELECTRIC
MITSUBISHI ELECTRIC
Description : UHF BAND GaAs POWER AMPLIFIER
Sony Semiconductor
Sony Semiconductor
Description : GaAs N-channel Dual Gate MES FET
Part Name(s) : MGF0905A
MITSUBISHI ELECTRIC
MITSUBISHI ELECTRIC
Description : L,S BAND POWER GaAs FET (Rev - 2004)
Part Name(s) : SGM2016AM SGM2016AP
Sony Semiconductor
Sony Semiconductor
Description : GaAs N-channel Dual-Gate MES FET
Part Name(s) : SGM2016AN
Sony Semiconductor
Sony Semiconductor
Description : GaAs N-channel Dual-Gate MES FET
Sony Semiconductor
Sony Semiconductor
Description : GaAs N-channel Dual-Gate MES FET
Part Name(s) : MGF0905A
MITSUBISHI ELECTRIC
MITSUBISHI ELECTRIC
Description : L,S BAND POWER GaAs FET (Rev - 1997)
Part Name(s) : MGF0911A
MITSUBISHI ELECTRIC
MITSUBISHI ELECTRIC
Description : L, S BAND POWER GaAs FET (Rev - 1997)
Part Name(s) : MGF0911A
MITSUBISHI ELECTRIC
MITSUBISHI ELECTRIC
Description : L, S BAND POWER GaAs FET (Rev - 2004)
Part Name(s) : SGM2014AN
Sony Semiconductor
Sony Semiconductor
Description : GaAs N-channel Dual Gate MES FET
Part Name(s) : 2SC1200
Toshiba
Toshiba
Description : MICRO TRANSISTER
Part Name(s) : SGM2014 SGM2014AM
Sony Semiconductor
Sony Semiconductor
Description : GaAs N-channel Dual Gate MES FET
Part Name(s) : SGM2013 SGM2013N
Sony Semiconductor
Sony Semiconductor
Description : GaAs N-channel Dual-Gate MES FET
Part Name(s) : SGM2014M
Sony Semiconductor
Sony Semiconductor
Description : GaAs N-channel Dual Gate MES FET
Part Name(s) : 2SC2104
Toshiba
Toshiba
Description : SILICON NPN EPITAXIAL PLANAR TYPE
Part Name(s) : 2SC2105
Toshiba
Toshiba
Description : SILICON NPN EPITAXIAL PLANAR TYPE
Part Name(s) : 2SC2106
Toshiba
Toshiba
Description : SILICON NPN EPITAXIAL PLANAR TYPE (Rev - V2)
Mitsumi
Mitsumi
Description : High-POWER GaAs FET (small signal gain stage)
12345678910 Next


All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]